-
Notifications
You must be signed in to change notification settings - Fork 0
/
nominal.jsim
51 lines (46 loc) · 2.55 KB
/
nominal.jsim
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
* nominal device models for 6.004
.global vdd
.temp 25
VDD vdd 0 3.3v
.MODEL NENH NMOS LEVEL=3 PHI=0.700000 TOX=9.4000E-09 XJ=0.200000U TPG=1
+ VTO=0.6746 DELTA=1.1480E+00 LD=3.4510E-08 KP=1.8217E-04
+ UO=495.9 THETA=1.7960E-01 RSH=3.2470E+01 GAMMA=0.5383
+ NSUB=1.1780E+17 NFS=7.1500E+11 VMAX=2.5000E+05 ETA=2.1880E-02
+ KAPPA=4.2390E-01 CGDO=9.0000E-11 CGSO=9.0000E-11
+ CGBO=3.7441E-10 CJ=5.79E-04 MJ=0.611 CJSW=2.00E-11
+ MJSW=0.621 PB=0.99
.MODEL PENH PMOS LEVEL=3 PHI=0.700000 TOX=9.4000E-09 XJ=0.200000U TPG=-1
+ VTO=-0.8887 DELTA=1.0060E+00 LD=1.0920E-08 KP=4.5773E-05
+ UO=124.6 THETA=6.9020E-02 RSH=1.9550E-01 GAMMA=0.4097
+ NSUB=6.8230E+16 NFS=6.5000E+11 VMAX=1.0000E+06 ETA=4.2420E-02
+ KAPPA=8.6130E+00 CGDO=9.0000E-11 CGSO=9.0000E-11
+ CGBO=3.5362E-10 CJ=9.30E-04 MJ=0.485 CJSW=2.32E-10
+ MJSW=0.213 PB=0.89
.options SCALE=0.6u CADJUST=0.87
.options vih=2.7 vil=0.6
.plotdef reg R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15
+ R16 R17 R18 R19 R20 R21 R22 R23 R24 R25 R26 R27 R28 R29 R30 R31
.plotdef betaop
+ ??? ??? ??? ??? ??? ??? ??? ???
+ ??? ??? ??? ??? ??? ??? ??? ???
+ ??? ??? ??? ??? ??? ??? ??? ???
+ LD ST ??? JMP ??? BEQ BNE LDR
+ ADD SUB MUL DIV CMPEQ CMPLT CMPLE ???
+ AND OR XOR ??? SHL SHR SRA ???
+ ADDC SUBC MULC DIVC CMPEQC CMPLTC CMPLEC ???
+ ANDC ORC XORC ??? SHLC SHRC SRAC ???
*PROCESS PARAMETERS N+DIFF P+DIFF POLY METAL1 METAL2 METAL3 UNITS
* Sheet Resistance 2.1 2.0 1.9 0.07 0.07 0.03 ohms/sq
* Width Variation -0.36 -0.29 -0.04 0.16 -0.04 -0.30 microns
* (measured - drawn)
* Contact Resistance 2.3 2.2 2.2 0.82 0.87 ohms
* Gate Oxide Thickness 94 angstroms
*CAPACITANCE PARAMETERS N+DIFF P+DIFF POLY METAL1 METAL2 METAL3 UNITS
* Area (substrate) 546 929 92 47 25 25 aF/um^2
* Area (poly) 59 18 11 aF/um^2
* Area (metal1) 37 14 aF/um^2
* Area (metal2) 33 aF/um^2
* Area (N+active) 3684 aF/um^2
* Area (P+active) 3500 aF/um^2
* Fringe (substrate) 195 234 aF/um
* Fringe (N+active) 105 aF/um