Radiative efficiency model for the 2D junction solver.

[iclned]

The present means for configuring J01 and J02 in the 2D junction solver is peculiar to MQW p-i-n devices, where the dominant non-radiative recombination takes place in the extended depletion region and scales as q/2kT, or ideality 1. In bulk p/n devices the depletion region is sufficiently small that non-radiative processes in the neutral regions of the device dominate so the non-radiative processes will likely dominate in J01. SolCore insists on bundling all non-radiative processes into J02, which is only appropriate when radiative recombination in QWs dominates. A more general model for external radiative efficiency in bulk p/n junctions is described by (and references therein)
https://ieeexplore.ieee.org/document/8674820/

radiative efficiency calculation is peculiar to QW p-i-n diodes and is erroneous for bulk p-n, where the dominant non-radiative recombination is often found in the J01 component, not J02.